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  rev.3.00 aug 10, 2005 page 1 of 5 2sA1084, 2sa1085 silicon pnp epitaxial rej03g0635-0300 (previous ade-208-1007a) rev.3.00 aug.10.2005 application low frequency low noise amplifier outline 1. emitter 2. collecto r 3. base renesas package code: prss0003da-a (package name: to-92 (1)) 3 2 1 absolute maximum ratings (ta = 25c) item symbol 2sA1084 2sa1085 unit collector to base voltage v cbo ?90 ?120 v collector to emitter voltage v ceo ?90 ?120 v emitter to base voltage v ebo ?5 ?5 v collector current i c ?100 ?100 ma emitter current i e 100 100 ma collector power dissipation p c 400 400 mw junction temperature tj 150 150 c storage temperature tstg ?55 to +150 ?55 to +150 c
2sA1084, 2sa1085 rev.3.00 aug 10, 2005 page 2 of 5 electrical characteristics (ta = 25c) 2sA1084 2sa1085 item symbol min typ max min typ max unit test conditions collector to base breakdown voltage v (br)cbo ?90 ? ? ?120 ? ? v i c = ?10 a, i e = 0 collector to emitter breakdown voltage v (br)ceo ?90 ? ? ?120 ? ? v i c = ?1 ma, r be = emitter to base breakdown voltage v (br)ebo ?5 ? ? ?5 ? ? v i e = ?10 a, i c = 0 collector cutoff current i cbo ? ? ?0.1 ? ? ?0.1 a v cb = ?50 v, i e = 0 emitter cutoff current i ebo ? ? ?0.1 ? ? ?0.1 a v eb = ?2 v, i c = 0 dc current transfer ratio h fe * 1 250 ? 800 250 ? 800 v ce = ?12 v, i c = ?2 ma collector to emitter saturation voltage v ce(sat) ? ? ?0.2 ? ? ?0.2 v i c = ?10 ma, i b = ?1 ma base to emitter voltage v be ? ?0.6 ? ? ?0.6 ? v v ce = ?12 v, i c = ?2 ma gain bandwidth product f t ? 90 ? ? 90 ? mhz v ce = ?12 v, i c = ?2 ma collector output capacitance cob ? 3.5 ? ? 3.5 ? pf v cb = ?10 v, i e = 0, f = 1 mhz noise voltage referred to input e n ? 0.5 ? ? 0.5 ? nv/ hz v ce = ?6v, i c = ?10 ma, f = 1 khz, r g = 0, ? f = 1hz note: 1. the 2sA1084 and 2sa1085 are grouped by h fe as follows. d e 250 to 500 400 to 800
2sA1084, 2sa1085 rev.3.00 aug 10, 2005 page 3 of 5 main characteristics maximum collector dissipation curve 600 400 200 050100 ambient temperature ta ( c) collector power dissipation p c (mw) 150 typical output characteristics (1) ?50 ?140 ?120 ?100 ? 80 ? 60 ? 40 ?20 a ?40 ?30 ?20 ?10 0 ?4 ?12 ?20 ?8 ?16 collector to emitter voltage v ce (v) collector current i c (ma) p c = 0.4 w i b = 0 typical output characteristics (2) ?20 ?16 ?12 ?8 ?4 0?4?8 collector to emitter voltage v ce (v) i b = 0 ?5 a ? 10 ?15 ?20 ?25 ?30 ?35 ?40 ?12 ?16 ?20 collector current i c (ma) typicaol transfer characteristics ?10 ?5 ?2 ?1.0 ?0.5 ?0.2 ?0.1 0 ?0.4 ?0.8 ?0.2 ?0.6 ?1.0 base to emitter voltage v be (v) collector current i c (ma) v ce = ?12 v dc current transfer ratio vs. collector current 5,000 2,000 1,000 500 200 100 50 ?0.1 ?1.0 ?10 ?100 ?3 ?30 ?0.3 collector current i c (ma) dc current teransfer ratio h fe v ce = ?12 v pulse collector to emitter saturation voltage vs. collector current ?1.0 ?0.5 ?0.2 ?0.1 ?0.05 ?0.02 ?0.01 ?1 ?5 ?2 ?20 ?100 ?10 ?50 collector current i c (ma) collector to emitter saturation voltage v ce(sat) (v) i c = 10 i b
2sA1084, 2sa1085 rev.3.00 aug 10, 2005 page 4 of 5 base to emitter saturation voltage vs. collector current ?10 ?5 ?2 ?1.0 ?0.5 ?0.2 ?0.1 ?1 ?5 ?2 ?20 ?100 ?10 ?50 collector current i c (ma) base to emitter saturation voltage v be(sat) (v) i c = 10 i b gain bandwidth product vs. collector current 2,000 1,000 500 200 100 50 20 ?1 ?5 ?20 ?100 ?2 ?10 ?50 collector current i c (ma) gain bandwidth product f t (mhz) v ce = ?12 v collector output capacitance vs. collector to base voltage 100 50 20 10 5 2 1 ?0.5 ?2 ?10 ?50 ?1.0 ?5 ?20 collector to base voltage v cb (v) collector output capacitance c ob (pf) i e = 0 f = 1 mhz contours of constant noise figure (1) 100 30 10 3 1.0 0.3 0.1 0.03 10 6 2 1 4 0.01 ?0.01 ?0.1 ?1.0 ?10 ?100 ?0.03 ?0.3 ?3 ?30 singnal source resistance r g (k ? ) collector current i c (ma) nf = 0.5 db v ce = ?6 v f = 1 khz contours of constant noise figure (2) 100 30 10 3 1.0 0.3 0.1 0.03 10 2 4 6 1 0.01 ?0.01 ?0.1 ?1.0 ?10 ?100 ?0.03 ?0.3 ?3 ?30 singnal source resistance r g (k ? ) collector current i c (ma) nf = 0.5 db v ce = ?6 v f = 120 hz collector current i c (ma) contours of constant noise figure (3) 100 30 10 3 1.0 0.3 0.1 0.03 1 0.01 ?0.01 ?0.1 ?1.0 ?10 ?100 ?0.03 ?0.3 ?3 ?30 singnal source resistance r g (k ? ) v ce = ?6 v f = 10 hz 2 4 6 10 nf = 0.5 db
2sA1084, 2sa1085 rev.3.00 aug 10, 2005 page 5 of 5 package dimensions 0.60 max 0.55 max 4.8 0.3 3.8 0.3 5.0 0.2 0.7 2.3 max 12.7 min 0.5 max 1.27 2.54 package name prss0003da-a to-92(1) / to-92(1)v mass[typ.] 0.25g sc-43a renesas code jeita package code unit: mm ordering information part name quantity shipping container 2sA1084etz-e 2sa1085dtz-e 2sa1085etz-e 2500 hold box, radial taping note: for some grades, production may be terminated. please contact the renesas sales office to check the state of production before ordering the product.
keep safety first in your circuit designs! 1. renesas technology corp. puts the maximum effort into making semiconductor products better and more reliable, but there is a lways the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placeme nt of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials 1. these materials are intended as a reference to assist our customers in the selection of the renesas technology corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to renesas t echnology corp. or a third party. 2. renesas technology corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents i nformation on products at the time of publication of these materials, and are subject to change by renesas technology corp. without notice due to product improvement s or other reasons. it is therefore recommended that customers contact renesas technology corp. or an authorized renesas technology corp. product distrib utor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. renesas technology corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies o r errors. please also pay attention to information published by renesas technology corp. by various means, including the renesas techn ology corp. semiconductor home page (http://www.renesas.com). 4. when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, a nd algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. renesas technology corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. renesas technology corp. semiconductors are not designed or manufactured for use in a device or system that is used under ci rcumstances in which human life is potentially at stake. please contact renesas technology corp. or an authorized renesas technology corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerosp ace, nuclear, or undersea repeater use. 6. the prior written approval of renesas technology corp. is necessary to reprint or reproduce in whole or in part these materi als. 7. if these products or technologies are subject to the japanese export control restrictions, they must be exported under a lic ense from the japanese government and cannot be imported into a country other than the approved destination. any diversion or reexport contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. 8. please contact renesas technology corp. for further details on these materials or the products contained therein. sales strategic planning div. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan http://www.renesas.com refer to " http://www.renesas.com/en/network " for the latest and detailed information. renesas technology america, inc. 450 holger way, san jose, ca 95134-1368, u.s.a tel: <1> (408) 382-7500, fax: <1> (408) 382-7501 renesas technology europe limited dukes meadow, millboard road, bourne end, buckinghamshire, sl8 5fh, u.k. tel: <44> (1628) 585-100, fax: <44> (1628) 585-900 renesas technology hong kong ltd. 7th floor, north tower, world finance centre, harbour city, 1 canton road, tsimshatsui, kowloon, hong kong tel: <852> 2265-6688, fax: <852> 2730-6071 renesas technology taiwan co., ltd. 10th floor, no.99, fushing north road, taipei, taiwan tel: <886> (2) 2715-2888, fax: <886> (2) 2713-2999 renesas technology (shanghai) co., ltd. unit2607 ruijing building, no.205 maoming road (s), shanghai 200020, china tel: <86> (21) 6472-1001, fax: <86> (21) 6415-2952 renesas technology singapore pte. ltd. 1 harbour front avenue, #06-10, keppel bay tower, singapore 098632 tel: <65> 6213-0200, fax: <65> 6278-8001 renesas technology korea co., ltd. kukje center bldg. 18th fl., 191, 2-ka, hangang-ro, yongsan-ku, seoul 140-702, korea tel: <82> 2-796-3115, fax: <82> 2-796-2145 renesas technology malaysia sdn. bhd. unit 906, block b, menara amcorp, amcorp trade centre, no.18, jalan persiaran barat, 46050 petaling jaya, selangor darul ehsan, malaysia tel: <603> 7955-9390, fax: <603> 7955-9510 renesas sales offices ? 200 5. re nesas technology corp ., all rights reser v ed. printed in ja pan. colophon .3.0


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